Infineon IGBT Module 1200 V

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Bulk discount available

Subtotal (1 tray of 10 units)*

TWD42,229.00

(exc. GST)

TWD44,340.40

(inc. GST)

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  • 10 unit(s) shipping from April 16, 2026
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Units
Per unit
Per Tray*
10 - 10TWD4,222.90TWD42,229.00
20 +TWD4,138.50TWD41,385.00

*price indicative

RS Stock No.:
244-5374
Mfr. Part No.:
FP100R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

515W

Number of Transistors

7

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Height

17mm

Length

122mm

Width

62 mm

Standards/Approvals

RoHS

Series

FP100R12KT4B11

Automotive Standard

No

COO (Country of Origin):
HU
The infineon IGBT module is suitable for auxiliary inverters, motor drives and servo drives etc.

Electrical features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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