MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 787-9140
Mfr. Part No.IRFP460BPBF
BrandVishay
TWD124.00
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS Stock No. 159-6516
Mfr. Part No.IRFP460BPBF
BrandVishay
TWD91.60
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS Stock No. 178-0786
Mfr. Part No.IRFP9240PBF
BrandVishay
TWD80.80
Each (In a Tube of 25)
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RS Stock No. 541-0862
Mfr. Part No.IRFP9240PBF
BrandVishay
TWD90.00
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P 12 A 200 V 500 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 150 W Single 1
RS Stock No. 165-2816
Mfr. Part No.SUP57N20-33-E3
BrandVishay
TWD132.30
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N 57 A 200 V 33 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 3.75 W Single 1
RS Stock No. 708-5014
Mfr. Part No.SUP57N20-33-E3
BrandVishay
TWD151.00
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N 57 A 200 V 33 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 3.75 W Single 1
RS Stock No. 541-1146
Mfr. Part No.IRFBG30PBF
BrandVishay
TWD62.00
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N 3.1 A 1000 V 5 Ω TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS Stock No. 178-0921
Mfr. Part No.IRFD120PBF
BrandVishay
TWD17.70
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N 1.3 A 100 V 270 mΩ HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1
RS Stock No. 178-0920
Mfr. Part No.IRFD9110PBF
BrandVishay
TWD18.40
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RS Stock No. 541-0749
Mfr. Part No.IRFD9110PBF
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TWD31.00
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P 700 mA 100 V 1.2 Ω HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1
RS Stock No. 542-9557
Mfr. Part No.IRFBF30PBF
BrandVishay
TWD75.00
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N 3.6 A 900 V 3.7 Ω TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS Stock No. 541-1691
Mfr. Part No.IRFD120PBF
BrandVishay
TWD30.00
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N 1.3 A 100 V 270 mΩ HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1
RS Stock No. 178-0844
Mfr. Part No.IRFBF30PBF
BrandVishay
TWD63.40
Each (In a Tube of 50)
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N 3.6 A 900 V 3.7 Ω TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS Stock No. 178-0801
Mfr. Part No.IRFP450APBF
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TWD73.20
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RS Stock No. 543-0030
Mfr. Part No.IRFP450APBF
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TWD99.00
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N 14 A 500 V 400 mΩ TO-247AC Through Hole 3 -30 V, +30 V Enhancement - 2V 190 W Single 1
RS Stock No. 165-6973
Mfr. Part No.SI7615ADN-T1-GE3
BrandVishay
TWD9.00
Each (On a Reel of 3000)
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P 35 A 20 V 9.8 mΩ PowerPAK 1212 Surface Mount 8 -12 V, +12 V Enhancement - 0.4V 52 W Single 1
RS Stock No. 815-2758
Mfr. Part No.IRFP244PBF
BrandVishay
TWD123.80
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N 15 A 250 V 280 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 150 W Single 1
RS Stock No. 541-0553
Mfr. Part No.IRFD9120PBF
BrandVishay
TWD33.00
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P 1 A 100 V 600 mΩ HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1
RS Stock No. 145-2044
Mfr. Part No.IRFP244PBF
BrandVishay
TWD105.80
Each (In a Tube of 25)
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N 15 A 250 V 280 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 150 W Single 1
RS Stock No. 787-9248
Mfr. Part No.SI7615ADN-T1-GE3
BrandVishay
TWD20.20
Each (In a Pack of 10)
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P 35 A 20 V 9.8 mΩ PowerPAK 1212 Surface Mount 8 -12 V, +12 V Enhancement - 0.4V 52 W Single 1