Infineon HEXFET N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263 IRLZ34NSTRLPBF
- RS Stock No.:
- 915-5112
- Distrelec Article No.:
- 304-44-481
- Mfr. Part No.:
- IRLZ34NSTRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Add 200 more to save 2%
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD988.00
(exc. GST)
TWD1,037.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Plus 780 unit(s) shipping from November 09, 2026
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 20 - 180 | TWD49.40 | TWD988.00 | - |
| 200 - 380 | TWD48.30 | TWD966.00 | 2% |
| 400 + | TWD47.40 | TWD948.00 | 4% |
*price indicative
- RS Stock No.:
- 915-5112
- Distrelec Article No.:
- 304-44-481
- Mfr. Part No.:
- IRLZ34NSTRLPBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 11.3mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 11.3mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NSTRLPBF
Features & Benefits
Applications
What is the maximum continuous current this component can handle?
How does this MOSFET manage thermal performance?
Can it be used in automotive applications?
What type of circuit configurations can it support?
Is it compatible with surface mount circuit designs?
Related links
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRLZ34NSTRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRLZ34NPBF
- Infineon HEXFET N-Channel Automotive MOSFET 55 V Enhancement, 3-Pin TO-252 IRFR4105ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-220 IRLIZ44NPBF
- Infineon HEXFET N-Channel Automotive MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IPD26N06S2L35ATMA2
- Infineon OptiMOS N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
