Infineon HEXFET Type N-Channel MOSFET, 13.6 A, 30 V Enhancement, 8-Pin SOIC IRF7821TRPBF
- RS Stock No.:
- 915-4963
- Mfr. Part No.:
- IRF7821TRPBF
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD586.00
(exc. GST)
TWD615.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 3,900 unit(s) shipping from July 02, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | TWD29.30 | TWD586.00 |
| 100 - 380 | TWD28.10 | TWD562.00 |
| 400 - 980 | TWD26.80 | TWD536.00 |
| 1000 + | TWD25.10 | TWD502.00 |
*price indicative
- RS Stock No.:
- 915-4963
- Mfr. Part No.:
- IRF7821TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 9.3nC | |
| Maximum Operating Temperature | 155°C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 9.3nC | ||
Maximum Operating Temperature 155°C | ||
Length 5mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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