Infineon HEXFET Type N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin SOIC IRF7832TRPBF
- RS Stock No.:
- 827-3896
- Mfr. Part No.:
- IRF7832TRPBF
- Manufacturer:
- Infineon
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TWD388.00
(exc. GST)
TWD407.40
(inc. GST)
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- 1,550 unit(s) shipping from September 03, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 990 | TWD38.80 | TWD388.00 |
| 1000 - 1990 | TWD37.70 | TWD377.00 |
| 2000 + | TWD35.20 | TWD352.00 |
*price indicative
- RS Stock No.:
- 827-3896
- Mfr. Part No.:
- IRF7832TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 155°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 155°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 20A Maximum Continuous Drain Current - IRF7832TRPBF
This MOSFET is a surface-mount N-channel enhancement device designed for power switching and control in compact electronic systems. It operates across a wide temperature range suitable for industrial environments and integrates into standard SOIC footprints for PCB assembly, offering a balance of current capability and manageable power dissipation for medium-power designs.
Features and Benefits:
• Very low on-resistance 4.8 mΩ enabling reduced conduction losses
• 20A continuous drain current supporting high-current loads
• 30V drain-source rating for common low-voltage power rails
• 34 nC typical gate charge for faster switching transitions
• 2.5W maximum power dissipation for sustained thermal handling
• ±20V gate-source tolerance allowing flexible drive levels
• 20A continuous drain current supporting high-current loads
• 30V drain-source rating for common low-voltage power rails
• 34 nC typical gate charge for faster switching transitions
• 2.5W maximum power dissipation for sustained thermal handling
• ±20V gate-source tolerance allowing flexible drive levels
Applications
• Suitable for DC-DC converter switching stages
• Ideal for motor driver power switches in compact designs
• Used with synchronous rectification in power supplies
• Can be used for load switching in telecoms equipment
• Appropriate for battery management and power distribution
• Ideal for motor driver power switches in compact designs
• Used with synchronous rectification in power supplies
• Can be used for load switching in telecoms equipment
• Appropriate for battery management and power distribution
What thermal extremes can it withstand in service?
The device is specified to function between -55 °C and 155 °C, enabling use in harsh industrial temperature conditions.
How many pins does the package present for PCB layout?
It comes in an 8-pin SOIC package which aids in standard footprint placement and thermal spreading.
What gate drive considerations arise from its gate charge?
With a typical gate charge of 34 nC, drivers must supply sufficient peak current to achieve the desired switching speed without excessive drive losses.
How does its forward voltage affect series conduction scenarios?
The measured forward voltage of 1V affects the drop across intrinsic diode events and should be considered when designing for reverse recovery or body-diode conduction.
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF9310TRPBF
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC