Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 913-4051
- Mfr. Part No.:
- IRLML0040TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 3000 units)*
TWD9,300.00
(exc. GST)
TWD9,780.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | TWD3.10 | TWD9,300.00 |
| 6000 + | TWD3.00 | TWD9,000.00 |
*price indicative
- RS Stock No.:
- 913-4051
- Mfr. Part No.:
- IRLML0040TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.6nC | |
| Maximum Power Dissipation Pd | 1.3W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.6nC | ||
Maximum Power Dissipation Pd 1.3W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML0040TRPBF
This power MOSFET is engineered for efficiency and reliability in a range of electronic circuits. With low on-resistance and high performance, it is suitable for applications that demand energy efficiency and robust operation. This component is notable for its ability to manage significant electrical loads, which makes it relevant for engineers and professionals in the automation and electronics sectors.
Features & Benefits
• Low RDS(on) of 56mΩ reduces switching losses
• Supports enhancement mode for efficient power control
• Maximum continuous drain current of 3.6A for steadfast operation
• Operates at a maximum drain-source voltage of 40V
• Designed for surface mount technology, perfect for compact designs
• Compatible with HEXFET technology for high performance
Applications
• Ideal for load and system switch
• Utilised in DC motor drive systems
• Effective for high-speed switching and amplifiers
• Suitable for surface mount in compact circuitry
• Employed in various power electronic circuits
What is the thermal resistance of this device?
The thermal resistance is typically 100°C/W, ensuring efficient heat dissipation during operation.
How does the gate threshold voltage impact device performance?
The gate threshold voltage ranges from 1.0 V to 2.5 V, providing flexibility in gate control across various applications.
Can it handle pulsed drain currents?
Yes, this component can endure pulsed drain currents that exceed its continuous rating, ensuring reliability in transient conditions.
What factors influence the maximum power dissipation of this component?
Power dissipation is mainly affected by ambient temperature and thermal resistance, which impact the junction temperature under load.
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 IRLML0040TRPBF
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML9301TRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23