Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23 IRLML0040TRPBF
- RS Stock No.:
- 725-9347
- Distrelec Article No.:
- 304-45-310
- Mfr. Part No.:
- IRLML0040TRPBF
- Manufacturer:
- Infineon
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TWD232.00
(exc. GST)
TWD243.60
(inc. GST)
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In Stock
- Plus 380 unit(s) shipping from August 17, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | TWD11.60 | TWD232.00 |
| 760 - 1480 | TWD11.30 | TWD226.00 |
| 1500 + | TWD10.60 | TWD212.00 |
*price indicative
- RS Stock No.:
- 725-9347
- Distrelec Article No.:
- 304-45-310
- Mfr. Part No.:
- IRLML0040TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.6nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.6nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 40V Maximum Drain Source Voltage, 3.6A Maximum Continuous Drain Current - IRLML0040TRPBF
This n-channel enhancement-mode MOSFET is designed for compact surface-mount power switching in electronic circuits. It operates across an extended temperature span and is suitable for applications requiring moderate current handling and low conduction losses. The device is supplied in a three-pin SOT-23 package and targets space-constrained SMT layouts where fast switching and efficient power transfer are required.
Features and Benefits:
• Low on-resistance of 56mΩ reduces conduction losses
• 40V drain-source rating supports medium-voltage switching
• Continuous drain current 3.6A enables modest load driving
• Typical gate charge 2.6nC permits faster switching speeds
• Power dissipation 1.3W manages thermal load in compact layouts
• Gate-source withstand 16V offers robust drive margin
• 40V drain-source rating supports medium-voltage switching
• Continuous drain current 3.6A enables modest load driving
• Typical gate charge 2.6nC permits faster switching speeds
• Power dissipation 1.3W manages thermal load in compact layouts
• Gate-source withstand 16V offers robust drive margin
Applications
• Suitable for DC-DC converter switch stages
• Ideal for battery-powered motor drivers
• Used with load switches in portable electronics
• Can be used for synchronous rectification in power supplies
• Appropriate for general-purpose switching in control boards
• Ideal for battery-powered motor drivers
• Used with load switches in portable electronics
• Can be used for synchronous rectification in power supplies
• Appropriate for general-purpose switching in control boards
What thermal range can it tolerate in demanding environments?
It is rated to operate from -55°C up to 150°C, allowing use in both cold and high-temperature conditions.
How does the package affect mounting and board space?
The SOT-23 surface-mount package offers a small footprint and straightforward three-pin PCB soldering for dense assemblies.
What aspect of the device helps reduce switching energy losses?
The relatively low typical gate charge of 2.6nC lowers the energy required to drive the gate, benefiting high-frequency switching designs.
What electrical limits should designers respect for safe operation?
Designers must not exceed the 40V drain-source voltage, the 16V gate-source limit, or the specified 3.6A continuous drain current.
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML9301TRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23