onsemi NTMFS5C646NL Type N-Channel MOSFET, 89 A, 60 V Enhancement, 8-Pin SO-8FL NTMFS5C646NLT1G
- RS Stock No.:
- 842-7933
- Mfr. Part No.:
- NTMFS5C646NLT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD312.00
(exc. GST)
TWD327.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 21, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 370 | TWD62.40 | TWD312.00 |
| 375 - 745 | TWD60.80 | TWD304.00 |
| 750 + | TWD59.80 | TWD299.00 |
*price indicative
- RS Stock No.:
- 842-7933
- Mfr. Part No.:
- NTMFS5C646NLT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8FL | |
| Series | NTMFS5C646NL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 66W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33.7nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8FL | ||
Series NTMFS5C646NL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 66W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33.7nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Height 1.05mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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