onsemi NTMFS N-Channel MOSFET, 323 A, 40 V Enhancement, 8-Pin SO-8FL NTMFS0D7N04XMT1G
- RS Stock No.:
- 220-593
- Mfr. Part No.:
- NTMFS0D7N04XMT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
TWD475.00
(exc. GST)
TWD498.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,490 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | TWD95.00 | TWD475.00 |
| 50 - 95 | TWD90.60 | TWD453.00 |
| 100 - 495 | TWD84.00 | TWD420.00 |
| 500 - 995 | TWD76.60 | TWD383.00 |
| 1000 + | TWD74.40 | TWD372.00 |
*price indicative
- RS Stock No.:
- 220-593
- Mfr. Part No.:
- NTMFS0D7N04XMT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 323A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS | |
| Package Type | SO-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 72.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 134W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.15mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 6.15mm | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 323A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS | ||
Package Type SO-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 72.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 134W | ||
Maximum Operating Temperature 175°C | ||
Width 5.15mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 6.15mm | ||
Height 1mm | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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