Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF
- RS Stock No.:
- 831-2853
- Distrelec Article No.:
- 304-44-448
- Mfr. Part No.:
- IRF640NSTRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD362.00
(exc. GST)
TWD380.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 170 unit(s) ready to ship from another location
- Plus 730 unit(s) shipping from June 18, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 190 | TWD36.20 | TWD362.00 |
| 200 + | TWD33.50 | TWD335.00 |
*price indicative
- RS Stock No.:
- 831-2853
- Distrelec Article No.:
- 304-44-448
- Mfr. Part No.:
- IRF640NSTRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NSTRLPBF
This MOSFET is essential for efficient power management across various applications, controlling electrical current flow in circuits to ensure performance and reliability. Its robust specifications make it particularly suitable for automation and electronic systems in contemporary electronics.
Features & Benefits
• N-channel configuration supports enhancement mode operation
• Maximum continuous drain current of 18A
• Peak drain-source voltage of 200V for diverse applications
• D2PAK package designed for surface mount convenience
• Low Rds(on) of 150mΩ reduces energy loss during operation
• High maximum operating temperature of +175°C for various environments
Applications
• Power management in automotive electronics
• Industrial power supplies for automation systems
• Motor control across different sectors
• Renewable energy systems for energy conversion
• High-frequency power inverter designs
What is the maximum drain-source voltage?
The maximum drain-source voltage rating is 200V, providing flexibility for high-voltage applications.
How is heat dissipation managed during operation?
This MOSFET offers a power dissipation capability of 150W, and its package design promotes effective heat management under high loads.
What are the implications of the gate threshold voltage range?
With a maximum gate threshold voltage of 4V and a minimum of 2V, it offers engineers a versatile range for switching applications.
Can this component be used in parallel configurations?
Yes, it can be easily paralleled due to its low on-resistance, making it suitable for high current applications.
How should it be soldered for optimal performance?
The soldering temperature should not exceed 300°C for 10 seconds to ensure proper installation without damaging the MOSFET.
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IRFS4020TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF640NPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFB4020PBF
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252 STD25NF20
- Vishay IRF640 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF640PBF
- onsemi IRL Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRL640A