Infineon HEXFET N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRF640NPBF

RS Stock No.:: 541-0014
Distrelec Article No.:: 303-41-285
Mfr. Part No.:: IRF640NPBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRF640NPBF

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RS Stock No.:: 541-0014
Distrelec Article No.:: 303-41-285
Mfr. Part No.:: IRF640NPBF
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	67nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	150W
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.67mm
	Width	4.69mm
	Height	8.77mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 67nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 150W
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.67mm
	Width 4.69mm
	Height 8.77mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NPBF

This MOSFET is intended for high-efficiency switching applications, providing a reliable solution for various electronic systems. Its N-channel configuration ensures minimal on-resistance and high reliability, making it suitable for power management in industrial and commercial environments. This component is designed specifically for users in the automation and electrical sectors, ensuring optimal performance in their applications.

Features & Benefits

• Continuous drain current up to 18A for robust power handling

• Operates effectively at voltage levels up to 200V for increased versatility

• Low on-resistance minimises energy loss during operation

• Simplified drive requirements facilitate integration into circuits

• Fully avalanche rated for enhanced safety and performance

Applications

• Utilised in power supply circuits for industrial automation

• Suitable for motor control in robotics

• Ideal for renewable energy systems such as solar inverters

• Employed in power switching systems for electrical equipment

• Utilised in amplification stages for audio equipment

How does temperature affect the performance?

The device functions efficiently within -55°C to +175°C, enabling use in various thermal environments without compromising performance.

What is the significance of the maximum gate-source voltage?

The MOSFET supports gate-source voltage levels of ±20V, ensuring safe operation and preventing damage during switching operations.

Can this component handle sudden voltage spikes?

Yes, it is fully avalanche rated, allowing it to endure brief voltage spikes, which enhances its performance in challenging applications.

What is the impact of on-resistance on overall efficiency?

Low on-resistance considerably reduces power dissipation during operation, thereby improving energy efficiency in power management applications.

Is it suitable for surface mount applications?

The TO-220AB package is specifically designed for through-hole mounting, ensuring effective heat dissipation rather than surface mounting.