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    N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

    RS Stock No.:
    541-0014
    Mfr. Part No.:
    IRF640NPBF
    Manufacturer:
    Infineon
    Infineon
    View all MOSFETs
    3 In stock for delivery next working day
    Add to Basket
    units

    Added

    Price (VAT excluded) Each

    TWD51.00

    (exc. GST)

    TWD53.55

    (inc. GST)

    unitsPer unit
    1 - 12TWD51.00
    13 - 24TWD50.00
    25 +TWD49.00
    RS Stock No.:
    541-0014
    Mfr. Part No.:
    IRF640NPBF
    Manufacturer:
    Infineon

    Product overview and Technical data sheets


    Legislation and Compliance


    Product Details

    N-Channel Power MOSFET 150V to 600V, Infineon


    Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.



    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current18 A
    Maximum Drain Source Voltage200 V
    Package TypeTO-220AB
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance150 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage4V
    Minimum Gate Threshold Voltage2V
    Maximum Power Dissipation150 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-20 V, +20 V
    Number of Elements per Chip1
    Typical Gate Charge @ Vgs67 nC @ 10 V
    Maximum Operating Temperature+175 °C
    Transistor MaterialSi
    Minimum Operating Temperature-55 °C
    Height8.77mm
    SeriesHEXFET
    3 In stock for delivery next working day
    Add to Basket
    units

    Added

    Price (VAT excluded) Each

    TWD51.00

    (exc. GST)

    TWD53.55

    (inc. GST)

    unitsPer unit
    1 - 12TWD51.00
    13 - 24TWD50.00
    25 +TWD49.00