Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 827-0119
- Distrelec Article No.:
- 304-44-421
- Mfr. Part No.:
- BSS119NH6327XTSA1
- Manufacturer:
- Infineon
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TWD1,050.00
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TWD1,102.50
(inc. GST)
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Units | Per unit | Per Reel* |
|---|---|---|
| 250 - 500 | TWD4.20 | TWD1,050.00 |
| 750 - 1250 | TWD4.00 | TWD1,000.00 |
| 1500 + | TWD4.00 | TWD1,000.00 |
*price indicative
- RS Stock No.:
- 827-0119
- Distrelec Article No.:
- 304-44-421
- Mfr. Part No.:
- BSS119NH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 190mA Maximum Continuous Drain Current - BSS119NH6327XTSA1
This MOSFET is a surface-mount N-channel transistor designed for switching and amplification tasks in compact electronic assemblies. It operates across a wide temperature span suitable for demanding environments and is intended for use where low power dissipation and modest current capability are acceptable. The device is supplied in a three-pin SOT-23 package optimised for automated PCB assembly.
Features and Benefits:
• 100V drain-to-source rating enables high-voltage switching capability
• 10Ω maximum Rds provides low conduction losses for small loads
• 500mW maximum power dissipation manages thermal load in compact circuits
• 190mA continuous drain current supports low-current control applications
• 0.6nC typical gate charge allows faster switching with minimal drive energy
• ±20V gate tolerance accommodates a broad gate-drive range
• 10Ω maximum Rds provides low conduction losses for small loads
• 500mW maximum power dissipation manages thermal load in compact circuits
• 190mA continuous drain current supports low-current control applications
• 0.6nC typical gate charge allows faster switching with minimal drive energy
• ±20V gate tolerance accommodates a broad gate-drive range
Applications
• Suitable for automotive sensor signal switching and control
• Ideal for general-purpose low-current power management
• Used with battery-management monitoring circuits in vehicles
• Can be used for small-signal high-voltage level shifting
• Used for gate-stage drivers in low-power converter designs
• Ideal for general-purpose low-current power management
• Used with battery-management monitoring circuits in vehicles
• Can be used for small-signal high-voltage level shifting
• Used for gate-stage drivers in low-power converter designs
What mounting method is required for PCB assembly?
It is intended for surface mounting in a three-terminal SOT-23 footprint compatible with standard pick-and-place processes.
How does it behave across temperature extremes?
It is rated to operate from -55°C up to 150°C, maintaining functionality across automotive-grade thermal ranges.
What gate-drive considerations should be made?
The device accepts up to ±20V on the gate and has a low typical gate charge of 0.6nC, reducing driver energy requirements and permitting smaller drive circuitry.
What mechanical envelope should designers allow for?
The package measures 2.9 x 1.3 x 1mm, enabling dense PCB layouts while providing the necessary creepage for its voltage class.
Related links
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