Infineon OptiMOS Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 124-9035
- Mfr. Part No.:
- 2N7002H6327XTSA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
TWD5,400.00
(exc. GST)
TWD5,670.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 24,000 unit(s) shipping from August 13, 2026
- Plus 24,000 unit(s) shipping from August 20, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | TWD1.80 | TWD5,400.00 |
| 6000 - 27000 | TWD1.70 | TWD5,100.00 |
| 30000 + | TWD1.70 | TWD5,100.00 |
*price indicative
- RS Stock No.:
- 124-9035
- Mfr. Part No.:
- 2N7002H6327XTSA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 0.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 0.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 4Ω Maximum Drain Source Resistance - 2N7002H6327XTSA2
This small-signal N-channel enhancement MOSFET is designed for high-speed switching in surface-mount applications. It operates across a wide ambient range and provides a compact switching element for low-current circuits where controlled conduction and fast gate response are required.
Features and Benefits:
• 60V drain-source rating enables higher-voltage switching
• 4Ω maximum Rds(on) reduces conduction losses at low currents
• 300mA continuous drain current supports small-signal loads
• 0.4nC typical gate charge yields rapid switching transitions
• 20V gate-source tolerance allows flexible drive voltages
• 500mW power dissipation manages thermal load in compact layouts
• 4Ω maximum Rds(on) reduces conduction losses at low currents
• 300mA continuous drain current supports small-signal loads
• 0.4nC typical gate charge yields rapid switching transitions
• 20V gate-source tolerance allows flexible drive voltages
• 500mW power dissipation manages thermal load in compact layouts
Applications
• Suitable for level-shifting and signal switching in control units
• Ideal for battery-powered sensor interface circuits
• Used with small relays and transistor-replacement switching
• Can be used for protection circuitry in consumer electronics
• Suitable for compact power-management modules on boards
• Ideal for battery-powered sensor interface circuits
• Used with small relays and transistor-replacement switching
• Can be used for protection circuitry in consumer electronics
• Suitable for compact power-management modules on boards
What package type should I expect for board layout planning?
It is supplied in a SOT-23 surface-mount package, easing placement on dense boards.
How does temperature influence operational capability?
It is specified to function from -55°C up to 150°C, allowing use across harsh and elevated-temperature environments.
What mechanical footprint dimensions matter for component spacing?
The component measures 2.9 x 1.3 x 1mm, useful when calculating clearance and neighbouring component placement.
How many terminals are available for schematic and routing?
The device has three pins consistent with single-channel MOSFET topology for straightforward routing.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002H6327XTSA2
- onsemi 2N7002K Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002K
- Nexperia 2N7002 Type N-Channel MOSFET 60 V Enhancement215
- Nexperia PMBF170 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Nexperia 2N7002 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- onsemi 2N7002K Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Nexperia PMBF170 Type N-Channel MOSFET 60 V Enhancement215
- DiodesZetex 2N7002 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23