Infineon SIPMOS Type P-Channel MOSFET, 1.17 A, 60 V Enhancement, 4-Pin SOT-223 BSP315PH6327XTSA1

RS Stock No.:: 826-9238
Distrelec Article No.:: 304-44-415
Mfr. Part No.:: BSP315PH6327XTSA1
Manufacturer:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 1.17 A, 60 V Enhancement, 4-Pin SOT-223 BSP315PH6327XTSA1

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Subtotal (1 pack of 50 units)*

TWD1,165.00

(exc. GST)

TWD1,223.00

(inc. GST)

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Units	Per unit	Per Pack*
50 - 200	TWD23.30	TWD1,165.00
250 - 450	TWD22.70	TWD1,135.00
500 +	TWD21.20	TWD1,060.00

*price indicative

RS Stock No.:: 826-9238
Distrelec Article No.:: 304-44-415
Mfr. Part No.:: BSP315PH6327XTSA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.17A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Typical Gate Charge Qg @ Vgs	5.2nC
	Maximum Power Dissipation Pd	1.8W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-0.97V
	Maximum Operating Temperature	150°C
	Width	3.5mm
	Standards/Approvals	No
	Height	1.6mm
	Length	6.5mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.17A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -20V, +20V
	Typical Gate Charge Qg @ Vgs 5.2nC
	Maximum Power Dissipation Pd 1.8W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -0.97V
	Maximum Operating Temperature 150°C
	Width 3.5mm
	Standards/Approvals No
	Height 1.6mm
	Length 6.5mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP315PH6327XTSA1

This MOSFET is a P-channel enhancement-mode transistor designed for surface-mount power switching in automotive and industrial contexts. It offers moderate current-handling and voltage capability for load switching and reverse-polarity protection in compact assemblies, and is suitable for environments that demand extended temperature operation.

Features and Benefits:

• 60V drain-source rating for medium-voltage switching capability
• 1.17A continuous drain current for small-signal power delivery
• 800 mΩ maximum RDS(on) for reduced conduction losses
• 5.2 nC typical gate charge for efficient gate drive
• 1.8W power dissipation enabling sustained low-power operation
• AEC‑Q101 qualification for automotive-grade stress tolerance

Applications

• Suitable for battery-management load switching in vehicles
• Ideal for reverse-polarity protection in automotive electronics
• Used with low-power DC/DC converters for high-side switching
• Can be used for load disconnect in telematics modules
• Suitable for compact power-control boards requiring surface mount

What temperature range can it operate within?

It is specified to function from -55 °C up to 150 °C to suit high-temperature environments.

Which package and mounting method does it use?

The device is supplied in a SOT-223 package and intended for surface mounting.

How many pins are available for circuit connections?

It provides four pins to accommodate source, drain, gate and mounting/contact arrangements.

What maximum gate voltage should be observed during use?

Gate-source voltage must not exceed 20V to avoid device stress.