Infineon SIPMOS Type P-Channel MOSFET, 1.17 A, 60 V Enhancement, 4-Pin SOT-223
- RS Stock No.:
- 178-5070
- Mfr. Part No.:
- BSP315PH6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 1000 units)*
TWD10,600.00
(exc. GST)
TWD11,130.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 9,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 4000 | TWD10.60 | TWD10,600.00 |
| 5000 + | TWD10.30 | TWD10,300.00 |
*price indicative
- RS Stock No.:
- 178-5070
- Mfr. Part No.:
- BSP315PH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.17A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Forward Voltage Vf | -0.97V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.17A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Forward Voltage Vf -0.97V | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP315PH6327XTSA1
This MOSFET is a P-channel enhancement-mode transistor designed for surface-mount power switching in automotive and industrial contexts. It offers moderate current-handling and voltage capability for load switching and reverse-polarity protection in compact assemblies, and is suitable for environments that demand extended temperature operation.
Features and Benefits:
• 60V drain-source rating for medium-voltage switching capability
• 1.17A continuous drain current for small-signal power delivery
• 800 mΩ maximum RDS(on) for reduced conduction losses
• 5.2 nC typical gate charge for efficient gate drive
• 1.8W power dissipation enabling sustained low-power operation
• AEC‑Q101 qualification for automotive-grade stress tolerance
• 1.17A continuous drain current for small-signal power delivery
• 800 mΩ maximum RDS(on) for reduced conduction losses
• 5.2 nC typical gate charge for efficient gate drive
• 1.8W power dissipation enabling sustained low-power operation
• AEC‑Q101 qualification for automotive-grade stress tolerance
Applications
• Suitable for battery-management load switching in vehicles
• Ideal for reverse-polarity protection in automotive electronics
• Used with low-power DC/DC converters for high-side switching
• Can be used for load disconnect in telematics modules
• Suitable for compact power-control boards requiring surface mount
• Ideal for reverse-polarity protection in automotive electronics
• Used with low-power DC/DC converters for high-side switching
• Can be used for load disconnect in telematics modules
• Suitable for compact power-control boards requiring surface mount
What temperature range can it operate within?
It is specified to function from -55 °C up to 150 °C to suit high-temperature environments.
Which package and mounting method does it use?
The device is supplied in a SOT-223 package and intended for surface mounting.
How many pins are available for circuit connections?
It provides four pins to accommodate source, drain, gate and mounting/contact arrangements.
What maximum gate voltage should be observed during use?
Gate-source voltage must not exceed 20V to avoid device stress.
Related links
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 BSP315PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 BSP322PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 BSP613PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 BSP171PH6327XTSA1