Vishay SQ Rugged N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SOIC SQ4850EY-T1_GE3
- RS Stock No.:
- 819-3923
- Mfr. Part No.:
- SQ4850EY-T1_GE3
- Manufacturer:
- Vishay
Subtotal (1 pack of 20 units)*
TWD886.00
(exc. GST)
TWD930.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 2,360 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 + | TWD44.30 | TWD886.00 |
*price indicative
- RS Stock No.:
- 819-3923
- Mfr. Part No.:
- SQ4850EY-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 47mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6.8W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Height | 1.55mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 47mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6.8W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 175°C | ||
Width 4mm | ||
Standards/Approvals No | ||
Height 1.55mm | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
- Vishay SQ Rugged N-Channel MOSFET 40 V Enhancement, 5-Pin SO-8 SQJ412EP-T1_GE3
- Vishay SQ Rugged N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP SQ3460EV-T1_GE3
- Vishay SQ Rugged N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3
- Vishay SQ Rugged N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD40N06-14L_GE3
- Vishay SQ Rugged N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD40N06-14L-GE3
- Vishay SQ Rugged N-Channel TrenchFET Power MOSFET 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SQ4431EY-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 40 V Enhancement, 8-Pin SOIC SQ4401EY-T1_GE3
