Vishay SQ Rugged Type N-Channel MOSFET, 40 A, 60 V Enhancement, 3-Pin TO-252 SQD40N06-14L_GE3
- RS Stock No.:
- 787-9484
- Mfr. Part No.:
- SQD40N06-14L_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD305.00
(exc. GST)
TWD320.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- 170 left, ready to ship from another location
- Final 1,630 unit(s) shipping from March 03, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD61.00 | TWD305.00 |
| 25 - 95 | TWD59.20 | TWD296.00 |
| 100 - 245 | TWD58.00 | TWD290.00 |
| 250 - 495 | TWD56.60 | TWD283.00 |
| 500 + | TWD55.20 | TWD276.00 |
*price indicative
- RS Stock No.:
- 787-9484
- Mfr. Part No.:
- SQD40N06-14L_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 75W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.38mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 75W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.38mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 40 V Enhancement, 5-Pin SO-8
- Vishay SQ Rugged Type N-Channel MOSFET 40 V Enhancement, 5-Pin SO-8 SQJ412EP-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SQ4850EY-T1_GE3
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
- Vishay SQ Rugged Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP
