Vishay TN2404K/TN2404KL/BS107KL N-Channel MOSFET, 300 mA, 240 V Enhancement, 3-Pin SOT-23 TN2404K-T1-GE3
- RS Stock No.:
- 818-7647
- Mfr. Part No.:
- TN2404K-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD550.00
(exc. GST)
TWD577.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 2,600 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | TWD27.50 | TWD550.00 |
| 760 - 1480 | TWD26.80 | TWD536.00 |
| 1500 + | TWD26.30 | TWD526.00 |
*price indicative
- RS Stock No.:
- 818-7647
- Mfr. Part No.:
- TN2404K-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Package Type | SOT-23 | |
| Series | TN2404K/TN2404KL/BS107KL | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.87nC | |
| Maximum Power Dissipation Pd | 510mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Package Type SOT-23 | ||
Series TN2404K/TN2404KL/BS107KL | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.87nC | ||
Maximum Power Dissipation Pd 510mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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