Vishay Si2338DS Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 Si2338DS-T1-GE3

The image is for reference only, please refer to product details and specifications

Subtotal (1 pack of 20 units)*

TWD314.00

(exc. GST)

TWD329.60

(inc. GST)

Add to Basket
Select or type quantity
Last RS stock
  • Final 7,600 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
20 +TWD15.70TWD314.00

*price indicative

Packaging Options:
RS Stock No.:
812-3126
Mfr. Part No.:
Si2338DS-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

Si2338DS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.033Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.2nC

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Length

3.04mm

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy