Vishay SiHF640L Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-262 SIHF640L-GE3

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Subtotal (1 pack of 10 units)*

TWD646.00

(exc. GST)

TWD678.30

(inc. GST)

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Units
Per unit
Per Pack*
10 - 10TWD64.60TWD646.00
20 +TWD62.90TWD629.00

*price indicative

Packaging Options:
RS Stock No.:
815-2635
Mfr. Part No.:
SIHF640L-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-262

Series

SiHF640L

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

130W

Forward Voltage Vf

2V

Typical Gate Charge Qg @ Vgs

70nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.67mm

Height

11.3mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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