Vishay SiB406EDK N-Channel MOSFET, 5.1 A, 20 V Enhancement, 6-Pin SC-75 SIB406EDK-T1-GE3
- RS Stock No.:
- 814-1247
- Mfr. Part No.:
- SIB406EDK-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD376.00
(exc. GST)
TWD394.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 19, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | TWD18.80 | TWD376.00 |
| 760 - 1480 | TWD18.50 | TWD370.00 |
| 1500 + | TWD18.00 | TWD360.00 |
*price indicative
- RS Stock No.:
- 814-1247
- Mfr. Part No.:
- SIB406EDK-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-75 | |
| Series | SiB406EDK | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 10W | |
| Forward Voltage Vf | 800mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.7mm | |
| Width | 1.7mm | |
| Height | 800μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-75 | ||
Series SiB406EDK | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 10W | ||
Forward Voltage Vf 800mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.7mm | ||
Width 1.7mm | ||
Height 800μm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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