Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3
- RS Stock No.:
- 814-1213
- Mfr. Part No.:
- SIA449DJ-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD364.00
(exc. GST)
TWD382.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 80 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | TWD18.20 | TWD364.00 |
| 760 - 1480 | TWD17.70 | TWD354.00 |
| 1500 + | TWD17.40 | TWD348.00 |
*price indicative
- RS Stock No.:
- 814-1213
- Mfr. Part No.:
- SIA449DJ-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.038Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Typical Gate Charge Qg @ Vgs | 23.1nC | |
| Maximum Power Dissipation Pd | 19W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.15mm | |
| Height | 800μm | |
| Length | 2.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.038Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Typical Gate Charge Qg @ Vgs 23.1nC | ||
Maximum Power Dissipation Pd 19W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature 150°C | ||
Width 2.15mm | ||
Height 800μm | ||
Length 2.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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