Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3
- RS Stock No.:
- 812-3108
- Mfr. Part No.:
- SI1967DH-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 tape of 50 units)*
TWD745.00
(exc. GST)
TWD782.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Plus 150 unit(s) shipping from August 10, 2026
Units | Per unit | Per Tape* |
|---|---|---|
| 50 - 700 | TWD14.90 | TWD745.00 |
| 750 - 1450 | TWD14.60 | TWD730.00 |
| 1500 + | TWD14.40 | TWD720.00 |
*price indicative
- RS Stock No.:
- 812-3108
- Mfr. Part No.:
- SI1967DH-T1-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 790mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.6nC | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 790mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.6nC | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 2.2mm | ||
Width 1.35mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay TrenchFET Series Power MOSFET, 20V Maximum Drain Source Voltage, 1.1A Maximum Continuous Drain Current - SI1967DH-T1-GE3
Features and Benefits:
• 1.1A continuous drain current supports steady loads
• 790mΩ Rds(on) minimises conduction losses
• 2.6nC typical gate charge allows faster gate transitions
• 1.25W power dissipation copes with moderate thermal stress
Applications
• Ideal for load switching in compact power modules
• Used with level-shifting stages in analogue front-ends
• Can be used for dual-channel switching in tight PCB spaces
What mounting style is required for assembly?
How many active transistor elements does it contain?
What gate voltage limits should designers observe?
What temperature range can it withstand during operation?
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