Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

RS Stock No.:: 812-3108
Mfr. Part No.:: SI1967DH-T1-GE3
Manufacturer:: Vishay

Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

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Bulk discount available

Price Each (On a Tape of 50)**

TWD9.60

(exc. GST)

TWD10.08

(inc. GST)

1650 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit	Per Tape**
50 - 700	TWD9.60	TWD480.00
750 - 1450	TWD9.30	TWD465.00
1500 +	TWD9.20	TWD460.00

**price indicative

RS Stock No.:: 812-3108
Mfr. Part No.:: SI1967DH-T1-GE3
Manufacturer:: Vishay

Si1967DH, Dual P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	1.1 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	790 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Width	1.35mm
Typical Gate Charge @ Vgs	2.6 nC @ 8 V
Number of Elements per Chip	2
Length	2.2mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Height	1mm
Minimum Operating Temperature	-55 °C

Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

FREE delivery for orders over TWD2,857.00 (ex VAT)

Dual P-Channel MOSFET, Vishay Semiconductor