Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3

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Subtotal (1 tape of 50 units)*

TWD545.00

(exc. GST)

TWD572.00

(inc. GST)

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Units
Per unit
Per Tape*
50 - 700TWD10.90TWD545.00
750 - 1450TWD10.60TWD530.00
1500 +TWD10.50TWD525.00

*price indicative

Packaging Options:
RS Stock No.:
812-3108
Mfr. Part No.:
SI1967DH-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

1.1A

Maximum Drain Source Voltage Vds

20V

Package Type

SC-88

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

790mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.25W

Typical Gate Charge Qg @ Vgs

2.6nC

Minimum Operating Temperature

150°C

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Length

2.2mm

Standards/Approvals

No

Height

1mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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