IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 70 A, 200 V Enhancement, 3-Pin TO-247 IXFH70N20Q3
- RS Stock No.:
- 801-1392
- Mfr. Part No.:
- IXFH70N20Q3
- Manufacturer:
- IXYS
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Subtotal (1 unit)*
TWD479.00
(exc. GST)
TWD502.95
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 301 unit(s) shipping from June 10, 2026
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Units | Per unit |
|---|---|
| 1 + | TWD479.00 |
*price indicative
- RS Stock No.:
- 801-1392
- Mfr. Part No.:
- IXFH70N20Q3
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HiperFET, Q3-Class | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Power Dissipation Pd | 690W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.26mm | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HiperFET, Q3-Class | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Power Dissipation Pd 690W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 16.26mm | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS