IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-247 IXFH50N60P3
- RS Stock No.:
- 802-4388
- Mfr. Part No.:
- IXFH50N60P3
- Manufacturer:
- IXYS
The image is for reference only, please refer to product details and specifications
Subtotal (1 unit)*
TWD356.00
(exc. GST)
TWD373.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- 6 left, ready to ship from another location
- Final 7 unit(s) shipping from March 05, 2026
Units | Per unit |
|---|---|
| 1 + | TWD356.00 |
*price indicative
- RS Stock No.:
- 802-4388
- Mfr. Part No.:
- IXFH50N60P3
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | HiperFET, Q3-Class | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 145mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.46mm | |
| Standards/Approvals | No | |
| Width | 5.3 mm | |
| Length | 16.26mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series HiperFET, Q3-Class | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 145mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 1.04kW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Maximum Operating Temperature 150°C | ||
Height 21.46mm | ||
Standards/Approvals No | ||
Width 5.3 mm | ||
Length 16.26mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
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