Vishay TP0610K Type P-Channel MOSFET, 185 mA, 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-GE3
- RS Stock No.:
- 787-9018
- Mfr. Part No.:
- TP0610K-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD164.00
(exc. GST)
TWD172.20
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | TWD8.20 | TWD164.00 |
| 100 + | TWD8.10 | TWD162.00 |
*price indicative
- RS Stock No.:
- 787-9018
- Mfr. Part No.:
- TP0610K-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 185mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TP0610K | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.4V | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 185mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TP0610K | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.4V | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Width 1.4mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-E3
- Vishay Isolated TrenchFET 2 Type P 135 mA 6-Pin SC-89-6 SI1025X-T1-GE3
- Vishay Si2309CDS Type P-Channel MOSFET -60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2303CDS-T1-GE3
- Vishay Si2323DDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2323DDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23 SI2337DS-T1-GE3
- Vishay Si2343CDS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2343CDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2365EDS-T1-GE3