Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2365EDS-T1-GE3

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Subtotal (1 pack of 50 units)*

TWD525.00

(exc. GST)

TWD551.00

(inc. GST)

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Units
Per unit
Per Pack*
50 - 700TWD10.50TWD525.00
750 - 1450TWD10.40TWD520.00
1500 +TWD10.10TWD505.00

*price indicative

Packaging Options:
RS Stock No.:
812-3139
Mfr. Part No.:
SI2365EDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.9A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.0675Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-8V, +8V

Maximum Power Dissipation Pd

1.7W

Typical Gate Charge Qg @ Vgs

13.8nC

Minimum Operating Temperature

-50°C

Forward Voltage Vf

-0.8V

Maximum Operating Temperature

150°C

Length

3.04mm

Standards/Approvals

RoHS

Width

1.4mm

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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