Infineon OptiMOS 3 N-Channel MOSFET, 21 A, 150 V Enhancement, 8-Pin TSDSON BSZ520N15NS3GATMA1

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Subtotal (1 pack of 2 units)*

TWD105.00

(exc. GST)

TWD110.24

(inc. GST)

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Units
Per unit
Per Pack*
2 - 1248TWD52.50TWD105.00
1250 - 2498TWD51.50TWD103.00
2500 +TWD48.00TWD96.00

*price indicative

Packaging Options:
RS Stock No.:
754-5389
Mfr. Part No.:
BSZ520N15NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

150V

Package Type

TSDSON

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8.7nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

-20V, +20V

Forward Voltage Vf

900mV

Maximum Operating Temperature

150°C

Height

1.1mm

Length

3.4mm

Standards/Approvals

No

Width

3.4mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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