Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 8-Pin TSDSON

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Subtotal (1 reel of 5000 units)*

TWD95,000.00

(exc. GST)

TWD99,750.00

(inc. GST)

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Per Reel*
5000 - 20000TWD19.00TWD95,000.00
25000 +TWD18.70TWD93,500.00

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RS Stock No.:
165-6689
Mfr. Part No.:
BSZ520N15NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 3

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

8.7nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

3.4mm

Height

1.1mm

Width

3.4 mm

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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