DiodesZetex ZVN4525E6 Type N-Channel MOSFET, 230 mA, 250 V Enhancement, 6-Pin SOT-23 ZVN4525E6TA
- RS Stock No.:
- 751-5265
- Mfr. Part No.:
- ZVN4525E6TA
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD231.00
(exc. GST)
TWD242.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 60 unit(s) ready to ship from another location
- Plus 780 unit(s) shipping from June 19, 2026
- Plus 3,000 unit(s) shipping from December 16, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD23.10 | TWD231.00 |
| 750 - 1490 | TWD20.40 | TWD204.00 |
| 1500 + | TWD20.00 | TWD200.00 |
*price indicative
- RS Stock No.:
- 751-5265
- Mfr. Part No.:
- ZVN4525E6TA
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | ZVN4525E6 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 9.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Typical Gate Charge Qg @ Vgs | 2.6nC | |
| Maximum Power Dissipation Pd | 1.1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1.3mm | |
| Automotive Standard | AEC-Q100, AEC-Q104, AEC-Q101, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Series ZVN4525E6 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 9.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Typical Gate Charge Qg @ Vgs 2.6nC | ||
Maximum Power Dissipation Pd 1.1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1.3mm | ||
Automotive Standard AEC-Q100, AEC-Q104, AEC-Q101, AEC-Q200 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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