Vishay Si7850DP Type N-Channel MOSFET, 6.2 A, 60 V Enhancement, 8-Pin SO-8 SI7850DP-T1-E3

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Subtotal (1 pack of 5 units)*

TWD242.00

(exc. GST)

TWD254.10

(inc. GST)

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Units
Per unit
Per Pack*
5 - 745TWD48.40TWD242.00
750 - 1495TWD47.80TWD239.00
1500 +TWD46.40TWD232.00

*price indicative

Packaging Options:
RS Stock No.:
710-4764
Mfr. Part No.:
SI7850DP-T1-E3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.2A

Maximum Drain Source Voltage Vds

60V

Series

Si7850DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

1.8W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

4.9mm

Height

1.04mm

Automotive Standard

No

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor


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