Vishay Si1302DL Type N-Channel MOSFET, 600 mA, 30 V Enhancement, 3-Pin SC-70 SI1302DL-T1-E3
- RS Stock No.:
- 655-6795
- Mfr. Part No.:
- SI1302DL-T1-E3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD65.00
(exc. GST)
TWD68.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- 1,040 left, ready to ship from another location
- Final 2,350 unit(s) shipping from March 03, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD6.50 | TWD65.00 |
| 750 - 1490 | TWD6.40 | TWD64.00 |
| 1500 + | TWD6.30 | TWD63.00 |
*price indicative
- RS Stock No.:
- 655-6795
- Mfr. Part No.:
- SI1302DL-T1-E3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si1302DL | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 480mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.86nC | |
| Maximum Power Dissipation Pd | 280mW | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si1302DL | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 480mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.86nC | ||
Maximum Power Dissipation Pd 280mW | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.35 mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si1302DL Type N-Channel MOSFET 30 V Enhancement, 3-Pin SC-70
- Nexperia NX3008NBKW Type N-Channel MOSFET 30 V Enhancement, 3-Pin SC-70
- Toshiba Type N-Channel MOSFET 30 V EnhancementF)
- Toshiba Type N-Channel MOSFET 30 V EnhancementLF(T
- Nexperia NX3008NBKW Type N-Channel MOSFET 30 V Enhancement115
- Nexperia NX3008PBKW Type P-Channel MOSFET 30 V Enhancement, 3-Pin SC-70
- Nexperia NX3008PBKW Type P-Channel MOSFET 30 V Enhancement115
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 6-Pin SC-70