Vishay Si1302DL N-Channel MOSFET, 600 mA, 30 V Enhancement, 3-Pin SC-70 SI1302DL-T1-E3
- RS Stock No.:
- 655-6795
- Mfr. Part No.:
- SI1302DL-T1-E3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD126.00
(exc. GST)
TWD132.30
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD12.60 | TWD126.00 |
| 750 - 1490 | TWD12.40 | TWD124.00 |
| 1500 + | TWD12.30 | TWD123.00 |
*price indicative
- RS Stock No.:
- 655-6795
- Mfr. Part No.:
- SI1302DL-T1-E3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-70 | |
| Series | Si1302DL | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 480mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.86nC | |
| Forward Voltage Vf | 800mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 280mW | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.35mm | |
| Length | 2.2mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-70 | ||
Series Si1302DL | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 480mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.86nC | ||
Forward Voltage Vf 800mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 280mW | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.35mm | ||
Length 2.2mm | ||
Height 1mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si1302DL N-Channel MOSFET 30 V Enhancement, 3-Pin SC-70 SI1302DL-T1-E3
- Toshiba N-Channel MOSFET 30 V EnhancementLF(T
- Nexperia NX3008NBKW N-Channel MOSFET 30 V Enhancement115
- Toshiba N-Channel MOSFET 30 V EnhancementF)
- onsemi Isolated PowerTrench 2 N-Channel MOSFET 20 V Enhancement, 6-Pin SC-89-6 FDY3000NZ
- onsemi NTS4001N N-Channel Small Signal MOSFET 30 V Enhancement Mode, 3-Pin SC-70 NTS4001NT1G
- Vishay Isolated TrenchFET 2 Type P 700 mA 6-Pin SC-70-6 SI1553CDL-T1-GE3
- Nexperia NX3008PBKW Type P-Channel MOSFET 30 V Enhancement, 3-Pin SC-70