onsemi NTF Type P-Channel MOSFET, 2.6 A, 60 V Enhancement, 4-Pin SOT-223 NTF2955T1G
- RS Stock No.:
- 688-9130
- Mfr. Part No.:
- NTF2955T1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD105.00
(exc. GST)
TWD110.24
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 66 unit(s) ready to ship from another location
- Plus 7,168 unit(s) shipping from October 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 248 | TWD52.50 | TWD105.00 |
| 250 - 498 | TWD52.00 | TWD104.00 |
| 500 + | TWD51.50 | TWD103.00 |
*price indicative
- RS Stock No.:
- 688-9130
- Mfr. Part No.:
- NTF2955T1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | NTF | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 185mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 2.3W | |
| Typical Gate Charge Qg @ Vgs | 14.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.5mm | |
| Standards/Approvals | No | |
| Height | 1.57mm | |
| Length | 6.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series NTF | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 185mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 2.3W | ||
Typical Gate Charge Qg @ Vgs 14.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 3.5mm | ||
Standards/Approvals No | ||
Height 1.57mm | ||
Length 6.5mm | ||
Automotive Standard No | ||
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