onsemi NTF Type P-Channel MOSFET, 2.9 A, 30 V Enhancement, 4-Pin SOT-223 NTF5P03T3G
- RS Stock No.:
- 802-1478
- Distrelec Article No.:
- 304-45-676
- Mfr. Part No.:
- NTF5P03T3G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD442.50
(exc. GST)
TWD464.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,450 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 975 | TWD17.70 | TWD442.50 |
| 1000 - 1975 | TWD17.20 | TWD430.00 |
| 2000 + | TWD17.00 | TWD425.00 |
*price indicative
- RS Stock No.:
- 802-1478
- Distrelec Article No.:
- 304-45-676
- Mfr. Part No.:
- NTF5P03T3G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NTF | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.13W | |
| Forward Voltage Vf | -1.5V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.65mm | |
| Automotive Standard | AEC | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NTF | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.13W | ||
Forward Voltage Vf -1.5V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.65mm | ||
Automotive Standard AEC | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
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