onsemi NDS7002A Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23 NDS7002A
- RS Stock No.:
- 671-1093
- Mfr. Part No.:
- NDS7002A
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD47.00
(exc. GST)
TWD49.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 30 unit(s) ready to ship from another location
- Plus 48,310 unit(s) shipping from June 18, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD4.70 | TWD47.00 |
| 750 - 1490 | TWD3.90 | TWD39.00 |
| 1500 + | TWD3.80 | TWD38.00 |
*price indicative
- RS Stock No.:
- 671-1093
- Mfr. Part No.:
- NDS7002A
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | NDS7002A | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.2nC | |
| Forward Voltage Vf | 0.88V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Height | 0.93mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series NDS7002A | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.2nC | ||
Forward Voltage Vf 0.88V | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Height 0.93mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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