Vishay IRFS9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-263 IRFS9N60APBF
- RS Stock No.:
- 542-9995
- Mfr. Part No.:
- IRFS9N60APBF
- Manufacturer:
- Vishay
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Subtotal (1 unit)*
TWD72.00
(exc. GST)
TWD75.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Plus 597 unit(s) shipping from July 27, 2026
Units | Per unit |
|---|---|
| 1 - 12 | TWD72.00 |
| 13 - 24 | TWD70.00 |
| 25 + | TWD69.00 |
*price indicative
- RS Stock No.:
- 542-9995
- Mfr. Part No.:
- IRFS9N60APBF
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IRFS9N60A | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| Standards/Approvals | RoHS | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IRFS9N60A | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Width 9.65mm | ||
Standards/Approvals RoHS | ||
Height 4.83mm | ||
Automotive Standard No | ||
Vishay IRFS9N60A Series Power MOSFET, 600V Maximum Drain Source Voltage, 9.2A Maximum Continuous Drain Current - IRFS9N60APBF
Features and Benefits:
• 9.2 A continuous drain current for steady load handling
• 750 mΩ on-resistance minimises conduction losses
• 49 nC typical gate charge for predictable switching energy
• 170W power dissipation supports elevated power throughput
• 150 °C maximum junction temperature for high-temperature operation
Applications
• Ideal for high-voltage inverter stages in industrial drives
• Used for switch-mode motor controllers handling elevated voltages
• Can be used for power-factor correction front-end circuits
What mounting format does it require for assembly?
What gate limits must be observed to avoid damage?
How does thermal management influence performance?
What environmental specification affects materials selection?
Related links
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- Vishay IRFB9N60A Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220AB IRFB9N60APBF
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB150N60E-GE3
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB155N60EF-GE3
