Vishay SISS Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin 1212-8 SISS4410DN-T1-GE3

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Subtotal (1 pack of 10 units)*

TWD234.00

(exc. GST)

TWD245.70

(inc. GST)

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Units
Per unit
Per Pack*
10 - 40TWD23.40TWD234.00
50 - 90TWD17.60TWD176.00
100 - 240TWD15.70TWD157.00
250 - 990TWD15.30TWD153.00
1000 +TWD15.10TWD151.00

*price indicative

Packaging Options:
RS Stock No.:
279-9990
Mfr. Part No.:
SISS4410DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

40V

Series

SISS

Package Type

1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.009Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

19.8W

Typical Gate Charge Qg @ Vgs

18nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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