Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3

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Subtotal (1 pack of 5 units)*

TWD268.00

(exc. GST)

TWD281.40

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45TWD53.60TWD268.00
50 - 95TWD45.60TWD228.00
100 - 245TWD40.60TWD203.00
250 - 995TWD39.60TWD198.00
1000 +TWD39.00TWD195.00

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Packaging Options:
RS Stock No.:
279-9996
Mfr. Part No.:
SISS5112DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40.7A

Maximum Drain Source Voltage Vds

100V

Package Type

1212-8S

Series

SISS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0149Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

16nC

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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