Vishay SISS Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin 1212-8S SISS5108DN-T1-GE3

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Subtotal (1 pack of 4 units)*

TWD305.20

(exc. GST)

TWD320.48

(inc. GST)

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Units
Per unit
Per Pack*
4 - 56TWD76.30TWD305.20
60 - 96TWD72.50TWD290.00
100 - 236TWD64.30TWD257.20
240 - 996TWD62.50TWD250.00
1000 +TWD61.80TWD247.20

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Packaging Options:
RS Stock No.:
279-9992
Mfr. Part No.:
SISS5108DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55.9A

Maximum Drain Source Voltage Vds

100V

Package Type

1212-8S

Series

SISS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0105Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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