Vishay EF Type N-Channel Power MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- RS Stock No.:
- 268-8296
- Mfr. Part No.:
- SIHG085N60EF-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 tube of 25 units)*
TWD3,585.00
(exc. GST)
TWD3,764.25
(inc. GST)
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 75 | TWD143.40 | TWD3,585.00 |
| 100 - 475 | TWD140.50 | TWD3,512.50 |
| 500 + | TWD137.70 | TWD3,442.50 |
*price indicative
- RS Stock No.:
- 268-8296
- Mfr. Part No.:
- SIHG085N60EF-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 34A Continuous Drain Current - SIHG085N60EF-GE3
Features and Benefits:
• 34A continuous drain current supports heavy load handling
• Low Rds(on) 0.084Ω reduces conduction losses
• 184W power dissipation allows higher power operation
• 63nC typical gate charge aids fast switching in SMPS
• Maximum operating temperature 150°C sustains hot environments
Applications
• Ideal for industrial motor drive front ends
• Used for power conversion in renewable energy inverters
• Can be used for high-voltage Pulse and inverter circuits
What gate-drive considerations are required for this device?
How should thermal management be approached in demanding installations?
Are there environmental operating limits for rugged deployments?
What electrical stress limits must designers observe?
Related links
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- Vishay EF Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220AB
- Vishay EF Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220AB
