Vishay EF Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC

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Subtotal (1 tube of 25 units)*

TWD3,585.00

(exc. GST)

TWD3,764.25

(inc. GST)

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Units
Per unit
Per Tube*
25 - 75TWD143.40TWD3,585.00
100 - 475TWD140.50TWD3,512.50
500 +TWD137.70TWD3,442.50

*price indicative

RS Stock No.:
268-8296
Mfr. Part No.:
SIHG085N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247AC

Series

EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

63nC

Maximum Power Dissipation Pd

184W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

15.7mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 34A Continuous Drain Current - SIHG085N60EF-GE3


This power MOSFET is a high-voltage N-channel device designed for switching and control tasks in industrial and electronic systems. It operates in enhancement mode and is supplied in a through-hole TO-247 package suited to assemblies requiring robust mounting and thermal handling. The device targets applications where elevated blocking voltage and substantial continuous current capability are required.

Features and Benefits:


• 650V maximum drain-source voltage enables high-voltage switching
• 34A continuous drain current supports heavy load handling
• Low Rds(on) 0.084Ω reduces conduction losses
• 184W power dissipation allows higher power operation
• 63nC typical gate charge aids fast switching in SMPS
• Maximum operating temperature 150°C sustains hot environments

Applications


• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive front ends
• Used for power conversion in renewable energy inverters
• Can be used for high-voltage Pulse and inverter circuits

What gate-drive considerations are required for this device?


Gate drive must accommodate a maximum gate-source rating of 30V and manage a typical gate charge of 63nC to achieve the desired switching speed while limiting transient overshoot.

How should thermal management be approached in demanding installations?


With a 184W power dissipation rating, use an appropriately sized heatsink and thermal mounting in the TO-247 through-hole format to keep junction temperatures within the device’s limits.

Are there environmental operating limits for rugged deployments?


The device is specified to operate down to -55°C and up to 150°C, enabling use across a wide temperature range common in industrial settings.

What electrical stress limits must designers observe?


Designers should respect the 650V drain-source maximum and ensure transient protection for voltage spikes that could exceed this rating.

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