Vishay EF Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3
- RS Stock No.:
- 279-9909
- Mfr. Part No.:
- SIHF085N60EF-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD248.00
(exc. GST)
TWD260.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD248.00 |
| 10 - 24 | TWD243.00 |
| 25 - 99 | TWD239.00 |
| 100 + | TWD224.00 |
*price indicative
- RS Stock No.:
- 279-9909
- Mfr. Part No.:
- SIHF085N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF MOSFET, 600V Maximum Drain Source Voltage, 13A Maximum Continuous Drain Current - SIHF085N60EF-GE3
This MOSFET is a high-voltage N-channel enhancement device intended for power-switching and control stages in through-hole assemblies. It is designed to handle elevated drain-to-source stresses while operating across a wide temperature span, making it suitable for demanding electronic systems that require robust switching and thermal endurance.
Features and Benefits:
• 600V drain capability enabling high-voltage switching applications
• 13A continuous drain current for sustained power delivery
• 0.084Ω low on-resistance reduces conduction losses
• 35W power dissipation supports moderate thermal loading
• 63nC typical gate charge allows predictable switching behaviour
• Vgs rating ±30V for robust gate-drive tolerances
• 13A continuous drain current for sustained power delivery
• 0.084Ω low on-resistance reduces conduction losses
• 35W power dissipation supports moderate thermal loading
• 63nC typical gate charge allows predictable switching behaviour
• Vgs rating ±30V for robust gate-drive tolerances
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor-drive switching stages
• Used with power supplies requiring through-hole mounting
• Can be used for switch-mode power supplies in industrial equipment
• Suitable for prototype and repair work on legacy power systems
• Ideal for industrial motor-drive switching stages
• Used with power supplies requiring through-hole mounting
• Can be used for switch-mode power supplies in industrial equipment
• Suitable for prototype and repair work on legacy power systems
What mounting style does it require and how does that affect thermal handling?
It uses a TO-220 through-hole package which permits bolting to a heatsink for improved thermal dissipation and straightforward PCB assembly.
What gate-drive considerations are necessary for efficient switching?
Design the driver to supply sufficient charge for the 63nC typical gate charge to achieve desired rise/fall times while avoiding excessive gate stress near the ±30V limit.
How does the device perform across temperature extremes?
It is rated to operate from -55°C up to 150°C, allowing use in environments with significant thermal variation while maintaining electrical characteristics.
What is the forward conduction characteristic relevant to diode conduction paths?
The forward voltage specification is 1.2V, which informs loss calculations when body diode conduction occurs during switching or reverse-current events.
Related links
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHA22N60EF-GE3
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247