Infineon CoolMOSTMPFD7 MOSFET, 16 A, 650 V Enhancement, 3-Pin PG-TO-220
- RS Stock No.:
- 273-7461
- Mfr. Part No.:
- IPAN60R210PFD7SXKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD213.00
(exc. GST)
TWD223.64
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 488 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD106.50 | TWD213.00 |
| 10 - 18 | TWD88.50 | TWD177.00 |
| 20 - 98 | TWD86.50 | TWD173.00 |
| 100 - 248 | TWD71.50 | TWD143.00 |
| 250 + | TWD65.00 | TWD130.00 |
*price indicative
- RS Stock No.:
- 273-7461
- Mfr. Part No.:
- IPAN60R210PFD7SXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-220 | |
| Series | CoolMOSTMPFD7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 25W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-220 | ||
Series CoolMOSTMPFD7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 25W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET offers Cool MOS revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. The latest Cool MOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor drive, lighting, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price to performance ratio and state of the art ease of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Fast body diode
Extremely low losses
Low switching losses Eoss
Excellent thermal behaviour
Excellent commutation ruggedness
Related links
- Infineon CoolMOSTMPFD7 MOSFET 650 V Enhancement, 3-Pin PG-TO-220 IPAN60R210PFD7SXKSA1
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-220 FullPAK SIHF110N65SF-GE3
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPP60R145CFD7XKSA1
- Infineon CoolMOS CP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPA60R199CPXKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPA60R600P7XKSA1