Infineon CoolMOSTMPFD7 MOSFET, 16 A, 650 V Enhancement, 3-Pin PG-TO-220 IPAN60R210PFD7SXKSA1
- RS Stock No.:
- 273-7460
- Mfr. Part No.:
- IPAN60R210PFD7SXKSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD2,870.00
(exc. GST)
TWD3,013.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 450 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD57.40 | TWD2,870.00 |
| 100 + | TWD45.90 | TWD2,295.00 |
*price indicative
- RS Stock No.:
- 273-7460
- Mfr. Part No.:
- IPAN60R210PFD7SXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-220 | |
| Series | CoolMOSTMPFD7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-220 | ||
Series CoolMOSTMPFD7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET offers Cool MOS revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. The latest Cool MOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor drive, lighting, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price to performance ratio and state of the art ease of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Fast body diode
Extremely low losses
Low switching losses Eoss
Excellent thermal behaviour
Excellent commutation ruggedness
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