Infineon ISZ Type N-Channel OptiMOSTM Power-MOSFET, 40 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- RS Stock No.:
- 273-3044
- Mfr. Part No.:
- ISZ040N03L5ISATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 25 units)*
TWD207.50
(exc. GST)
TWD218.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | TWD8.30 | TWD207.50 |
| 50 - 475 | TWD8.20 | TWD205.00 |
| 500 - 975 | TWD8.00 | TWD200.00 |
| 1000 - 2475 | TWD7.80 | TWD195.00 |
| 2500 + | TWD7.50 | TWD187.50 |
*price indicative
- RS Stock No.:
- 273-3044
- Mfr. Part No.:
- ISZ040N03L5ISATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | OptiMOSTM Power-MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TSDSON-8FL | |
| Series | ISZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 37W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC, IEC61249‑2‑21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type OptiMOSTM Power-MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TSDSON-8FL | ||
Series ISZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 37W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC, IEC61249‑2‑21 | ||
Automotive Standard No | ||
The Infineon low voltage power MOSFETs offering broad accessibility and competitive price/performance ratio.
Enables cost effective solutions
Fast shipment
Related links
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