Infineon ISZ N-Channel Power Transistor, 26 A, 200 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ520N20NM6ATMA1
- RS Stock No.:
- 349-157
- Mfr. Part No.:
- ISZ520N20NM6ATMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD345.00
(exc. GST)
TWD362.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD69.00 | TWD345.00 |
| 50 - 95 | TWD65.60 | TWD328.00 |
| 100 - 495 | TWD60.80 | TWD304.00 |
| 500 - 995 | TWD56.00 | TWD280.00 |
| 1000 + | TWD53.80 | TWD269.00 |
*price indicative
- RS Stock No.:
- 349-157
- Mfr. Part No.:
- ISZ520N20NM6ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | ISZ | |
| Package Type | PG-TSDSON-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 88W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 9.9nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series ISZ | ||
Package Type PG-TSDSON-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 88W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 9.9nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 MOSFET is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.
Low conduction losses
Low switching losses
Stable operation with improved EMI
Less paralleling required
Better current sharing when paralleling
Environmentally friendly
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