Infineon IPP65R190CFD7A Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin PG-TO220-3
- RS Stock No.:
- 273-3022
- Mfr. Part No.:
- IPP65R190CFD7AAKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD172.00
(exc. GST)
TWD180.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD86.00 | TWD172.00 |
| 10 - 18 | TWD78.50 | TWD157.00 |
| 20 - 24 | TWD77.00 | TWD154.00 |
| 26 - 48 | TWD71.50 | TWD143.00 |
| 50 + | TWD66.50 | TWD133.00 |
*price indicative
- RS Stock No.:
- 273-3022
- Mfr. Part No.:
- IPP65R190CFD7AAKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPP65R190CFD7A | |
| Package Type | PG-TO220-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 77W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AECQ101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPP65R190CFD7A | ||
Package Type PG-TO220-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 77W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AECQ101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V cool MOS N channel automotive SJ power MOSFET. It has highest reliability in the field meeting automotive lifetime requirements.
Enabling of higher power density designs
Granular portfolio available
Related links
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