Infineon IPP65R190CFD7A Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin PG-TO220-3 IPP65R190CFD7AAKSA1

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Subtotal (1 tube of 50 units)*

TWD2,855.00

(exc. GST)

TWD2,998.00

(inc. GST)

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  • 500 unit(s) ready to ship from another location
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Per Tube*
50 - 50TWD57.10TWD2,855.00
100 +TWD56.00TWD2,800.00

*price indicative

RS Stock No.:
273-3021
Mfr. Part No.:
IPP65R190CFD7AAKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

650V

Series

IPP65R190CFD7A

Package Type

PG-TO220-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

77W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

AECQ101, RoHS

Automotive Standard

AEC-Q101

The Infineon 650V cool MOS N channel automotive SJ power MOSFET. It has highest reliability in the field meeting automotive lifetime requirements.

Enabling of higher power density designs

Granular portfolio available

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