Infineon OptiMOS Type N-Channel MOSFET, 6 A, 650 V Enhancement, 3-Pin TO-263 IPB65R660CFDAATMA1
- RS Stock No.:
- 273-2999
- Mfr. Part No.:
- IPB65R660CFDAATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 1000 units)*
TWD30,900.00
(exc. GST)
TWD32,440.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from November 06, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | TWD30.90 | TWD30,900.00 |
*price indicative
- RS Stock No.:
- 273-2999
- Mfr. Part No.:
- IPB65R660CFDAATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.66Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.66Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V cool MOS CFDA super junction MOSFET is Infineon's second generation of market leading automotive qualified high voltage cool MOS power MOSFETs. In addition to the well known attributes of high quality and reliability required by the auto
Reduced EMI appearance and easy to design in
Better light load efficiency
Lower switching losses
Related links
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R099CFD7AATMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO252-3 IPD60R600CM8XTMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R050CFD7AATMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R115CFD7AATMA1