Infineon OptiMOS Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R050CFD7AATMA1
- RS Stock No.:
- 273-2775
- Mfr. Part No.:
- IPB65R050CFD7AATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 1000 units)*
TWD155,700.00
(exc. GST)
TWD163,480.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Shipping from August 14, 2026
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | TWD155.70 | TWD155,700.00 |
*price indicative
- RS Stock No.:
- 273-2775
- Mfr. Part No.:
- IPB65R050CFD7AATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO263-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.05Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 227W | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO263-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.05Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 227W | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Related links
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
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