Infineon IPT N-Channel Power Transistor, 52 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IPT60R045CFD7XTMA1
- RS Stock No.:
- 273-2798
- Mfr. Part No.:
- IPT60R045CFD7XTMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD375.00
(exc. GST)
TWD393.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 90 unit(s) shipping from October 19, 2026
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Units | Per unit |
|---|---|
| 1 - 49 | TWD375.00 |
| 50 - 99 | TWD339.00 |
| 100 - 249 | TWD313.00 |
| 250 - 999 | TWD289.00 |
| 1000 + | TWD270.00 |
*price indicative
- RS Stock No.:
- 273-2798
- Mfr. Part No.:
- IPT60R045CFD7XTMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Power Dissipation Pd | 272W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Power Dissipation Pd 272W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC for Industrial Applications | ||
Automotive Standard No | ||
The Infineon MOSFET is a 600V CoolMOS CFD7 power transistor. The CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase shift full bridge and LLC. Resulting from reduced gate charge, best in class reverse recovery charge and improved turn off behaviour CoolMOSCFD7 offers highest efficiency in resonant topologies.
RoHS compliant
Low gate charge
Ultra fast body diode
Increased power density solutions
Excellent hard commutation ruggedness
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